Since molecular beam epitaxy technique appeared, the research of semiconductor physics has gained many amazing break throughs.
自从分子束外延生长技术出现以来，半导体物理的研究获得许多惊人的突破。
Chemical beam epitaxy (CBE), a novel technique for thin-film crystal growth, is introduced.
本文介绍了薄膜晶体生长的最新技术——化学束外延(CBE)。
A brief review is given to the present status and prospect for atomic layer epitaxy (ALE) technique.
综述了原子层外延(ale)技术的现状及其发展趋势。
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