The authors improved the routine steady-state surface photovoltage method to measure minority carrier diffusion length in both sides polished silicon wafers.

本文改进了常规表面光电压测试少子扩散长度法，采用环形下电极消除了薄样品背面光电压信号对测量结果的影响；

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Copper nanocrystallites were deposited on mechanically polished single crystal silicon (sc-Si) wafers by electroless deposition method.

采用无电镀沉积技术在经过机械抛光的单晶硅衬底上沉积了铜纳米晶。

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This article mainly introduces the technique of having both sides of silicon wafers polished simultaneously on the polishing machine made domestically.

本文主要介绍在国产双面抛光机上一次同时完成的硅片双面抛光技术。

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