电子器件投稿系统 关键词： SiGe HBT；热模拟；分段结构；自热效应 [gap=989]Keywords: SiGe HBT; Thermal Simulation; Segmented Structure; Self-Heating Effect
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为进一步探讨该 自发热效应 ( self-heating effect )，我们采用通道宽度为1504μm和通道长度为4μm的元件，改变其结构如直条形、指状形、蛇形和多通道结构来探讨此现象，研究发现在...
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reduction of the self-heating effect 自加热效应的抑制
Lots of results have been gained. According to the results, all of the parameters of devices can give impacts on the Self-Heating effect for SOI device.
根据这些模拟结果，我们在进行SOI器件设计时，在适当满足其它要求的情况下，可以通过优化器件参数来有效降低自加热效应对器件性能的影响。
参考来源 - SOI器件的物理效应模拟及其抗总剂量辐射加固技术的研究·2,447,543篇论文数据，部分数据来源于NoteExpress
The results of negative resistance effect and transient characteristics of a SOI structure prove that the program can correctly simulate the main phenomena caused by self heating effect.
对一个SOI结构的负阻效应和瞬态特性的模拟结果表明，该程序能够正确模拟器件发热情况以及自热对器件特性的主要影响。
Meanwhile, it can also effectively reduce self inductance effect of the micro-heater and improve the heating efficiency.
同时该结构还能有效减小微加热器本身的自感效应，提高加热效率。
This study is useful for understanding the mechanism of self-heating degradation, and to find approaches to effectively alleviate the SH effect in device operation.
确认了改善器件自加热退化的有效途径，同时有助于揭示多晶硅薄膜晶体管自加热退化的内在机制。
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