...属纳米粒子表现出单电子现象[3],它是指由金属纳米粒子构成的纳米电子器件的电流-电压(I-V)曲线表现出库仑阻塞(Coulomb blockade)和
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Some typical effects including weak localization effect, universal conductance fluctuations, coulomb blockade effect, Ahoronov-Bolm effect, and integer and fractional quantum Hall effect have been introduced briefly in Chapter 1.
第一章简单介绍了介观物理中的几个典型效应，包括弱局域化效应、普适电导涨落、库仑阻塞效应、Aharonov-Bolm效应、整数及分数量子霍尔效应等。
参考来源 - 单载流子在耦合量子点体系中的动力学特性·2,447,543篇论文数据，部分数据来源于NoteExpress
复合材料低温下(77k)的体积电阻率明显高于纯sp，可以看作是库仑阻塞作用的结果。
Resistivity of the composite is much greater than that of pure SP under cryogenic temperature (77k), which is called Coulomb Blockade Effect.
以单电子晶体管为研究对象，系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。
The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electron tunneling were described with single electron transistor(SET) as the research object.
研究结果表明押存在耗散元件的介观电路的库仑阻塞效应不仅与电路的非耗散有关熏而且与耗散电阻有关。
Our research results show that the condition for Coulomb blockade in the dissipative mesoscopic circuit is related not only to the non-dissipative component, but also to the dissipative resistance.
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