揭示了常规热丝法薄膜淀积工艺中热钨丝易断裂的原因。
The reason why tungsten wire is easy to break in the silicon thin film deposition process by hot wire deposition method was explained.
论述用辐射热平衡法（热丝法）测量材料半球全发射率的原理；
The principle of measuring the hemisphere integrated radiant emittance by the radiation heat-equilibrium method (filament method) was discussed.
为了解结晶器与坯壳间渣膜的结晶状态，用热丝法熔化性能测定仪对保护渣结晶性能进行研究。
The crystallization properties of fluxes were studied by a single hot thermocouple in order to understand the crystalline state of flux film.
提出了一种利用电子开关转换实现的热丝法测温方案，实现了热电偶加热状态和检测状态的转换。
A temperature detect scheme of hot-wire method with electronic switching is given in this paper. The change of heating state and sensing state for thermocouple is completed successfully.
本工作利用热丝化学气相沉积(HFCVD)法获得了(100)取向不同质量的金刚石薄膜，并制备了CVD金刚石辐射探测器。
In present work, (100) oriented CVD diamond films with different quality obtained by a hot-filament chemical vapor deposition (HFCVD) technique were used to fabricate radiation detectors.
采用热丝化学气相沉积法(HFCVD)在普通玻璃衬底上低温沉积多晶硅薄膜。
Polycrystalline silicon thin films were prepared by hot-filament chemical vapor deposition (HFCVD) on glass at low-temperatures.
用XL 30feg扫描电镜对热丝化学气相沉积(HFCVD)法合成的金刚石颗粒的初期生长过程进行了研究。
The initial growth process of diamond grain synthesized by HFCVD method was investigated by using XL30FEG SEM.
采用热丝化学气相沉积法在覆盖c _(60)膜的硅基片上沉积金刚石膜，研究了金刚石膜的成核与生长。
In this paper, the diamond films were grown on the C_ (60) -coated silicon substrate by using hot-filament chemical vapor deposition technique. The diamond nucleation and growth were studied.
采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。
B-doped diamond films were grown on graphite substrates by hot filament assisted CVD method (HFCVD).
热导检测器(TCD)又称热导池或热丝检热器，是气相色谱法最常用的一种检测器。
Thermal conductivity detector (TCD), also known as thermal conductivity of the pool or hot wire, is the most commonly used gas chromatography a detector.
采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。
B-doped diamond films were grown on graphite substrates by hot filament assisted CVD method (HFCVD). The dopant was solid B_2O_3.
采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。
B-doped diamond films were grown on graphite substrates by hot filament assisted CVD method (HFCVD). The dopant was solid B_2O_3.
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