For example, as shown in FIG. 8a, an oxide layer 810 optionally is patterned on a silicon substrate 820.
例如，如图8a所示，氧化层810选择性地在硅衬底820上形成图案。
It combines an Au microelectrodes array (AuMEA) with two light-addressable potentiometric sensors (LAPS) on a silicon substrate.
系统由一个电化学微电极阵列和两个光寻址电位传感器组成。
The method is as follows: the surface of a silicon substrate adopts the three-layer metal wiring of metal 1, metal 2 and metal 3;
所述方法是：在硅基板的表面采用金属1、金属2和金属3三层金属布线；
The silicon wafer comprises a silicon substrate, an insulating layer, at least one electric element and at least one perforating hole.
该硅晶片包括硅基材、绝缘层、至少一电性元件及至少一穿导孔。
The invention discloses a method for growing a gallium nitride membrane on a silicon substrate, which comprises the following steps: selecting the silicon substrate;
本发明公开了一种在硅衬底上生长氮化镓薄膜的方法，包括如下步骤：选择硅衬底；
SOI refers to the use of a layered silicon-insulator-silicon substrate in IC manufacturing, which is said to reduce parasitic device capacitance and improve performance.
SOI指的是在IC的制造过程中采用硅+绝缘层+硅的硅基体结构方式，这种结构方式的优势是可以减小器件的寄生电容并改善器件的性能。
A team of Mexican scientists found that the heated vapor from 80-proof (40% alcohol) tequila blanco, when deposited on a silicon or stainless steel substrate, can form diamond films.
一组墨西哥科学家发现从标准度数（40%酒精含量）的银色龙舌兰酒中加热得到的热蒸汽当凝结到硅或不锈钢基底上时能够形成钻石薄膜。
Conventional transistors use a metal electrode, called the gate, to control the flow of electrons through a planar channel in the silicon substrate.
传统晶体管使用一个叫做“栅极”的金属电极，以控制电子在平面硅基片上的沟道中的流动。
The researchers placed a silicon nitride waveguide on a transparent nanoporous silicon oxide substrate that they specially developed to have a much lower refractive index than that of the waveguide.
其做法是在纳米级氧化硅透明衬底上生长氮化硅波导，衬底的折射率远小于波导。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
Kim said, "We will be able to use a low-temperature polycrystal silicon with the sixth-generation size glass substrate."
Kim称：“我们现在已经可以在6G尺寸级别的基板上应用低温多晶硅技术。
In this paper, we have studied a preparation and structure of ceramic silicon sheets for substrate of poly-Si thin film solar cells.
文章研究了用来作为多晶硅薄膜太阳电池衬底的陶瓷硅材料的制备方法及其结构。
A way to circumvent the problem is to fabricate devices in small islands of silicon on an insulating substrate as shown in Fig. 32.
消除这个问题的一个方法是把器件制造在绝缘衬底的硅岛上，如图32所示。
Through the technology of RF and DC reactive sputtering manufacture, H2S gas sensors have been developed on silicon substrate on which a heater made of Pt were attached.
通过交流和直流反应溅射，我们以硅基片（表面上有白金加热电极）为基底制作H_2S气敏元件。
A via hole is formed in the substrate within the spirally patterned conductor layer, the via hole being formed by through silicon via (TSV).
介层洞形成于螺旋图案化导体层内部的基材中，该介层洞通过硅通孔技术制成。
The insulating layer is positioned on a first surface of the silicon substrate.
该绝缘层位于该硅基材的第一表面。
The porous silicon as a sacrificial layer could be fabricated in locally defined areas on the si substrate, using the selective formation of porous silicon.
利用多孔硅形成的选择性，在指定的硅衬底区域制作多孔硅作牺牲层。
A layer of europium oxide red light luminescent thin film is deposited on one side surface of a single crystal silicon substrate.
在单晶硅衬底的一个侧面沉积有一层氧化铕红光发光薄膜。
Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided.
本发明提供具有界定在基板支撑组件与气体分配板之间的梯度间隔，且用于沉积供太阳能电池应用的硅薄膜的设备及方法。
The electric element is positioned inside the silicon substrate and is exposed on a second surface of the silicon substrate.
该电性元件位于该硅基材内，且显露于该硅基材的第二表面。
A silicon carbon layer is deposited on the substrate.
在基板上沉积硅碳层。
A processing tool containing a processing system for forming a silicon-containing film ons substrate using a HCD process gas is provided.
本发明还提供了一种包括处理系统的处理工具，处理系统用于利用HCD处理气体在衬底上形成含硅膜。
The micro machinery commonly is formed by a semiconductor substrate such as a silicon wafer.
微机械一般使用半导体衬底比如硅晶片形成。
The invention discloses an etching stopping layer comprising a nitrogenous silicon carbide layer formed on a substrate and a silicon nitride layer formed on the silicon carbide layer.
本发明公开了一种刻蚀停止层，包括在衬底上形成的含氮的碳化硅 层，以及位于所述碳化硅层之上的氮化硅层。
The compositions can be applied to a silicon wafer or other substrate to form a cured or hardened layer which is initially insoluble in typical photoresist developing solutions.
所述组合物可以施涂到硅片或其它基材上，形成开始时不溶于一般光致抗蚀剂显影溶液中的固化或硬化层。
The method can selectively deposit an epitaxial silicon-containing film on a silicon surface of a substrate or, alternately, non-selectively deposit a silicon-containing film on a substrate.
该方法可以在衬底的硅表面上选择性地沉积外延含硅膜，或者在衬底上非选择 性地沉积含硅膜。
The paste composition is a paste composition for forming an electrode (8) on a silicon semiconductor substrate (1) and comprises an aluminum powder, an organic vehicle, and a hydroxide.
膏组合物是用于在硅半导体基板(1)上形成电极(8)用的膏组合物，含有铝粉末、有机质媒介物和氢氧化物。
The invention discloses a forming method for metal silicide, which comprises the following steps of: providing a substrate with the surface having silicon material;
本发明公开了一种金属硅化物的形成方法，包括步骤：提供一表面含硅 材料的衬底；
The invention discloses a forming method for metal silicide, which comprises the following steps of: providing a substrate with the surface having silicon material;
本发明公开了一种金属硅化物的形成方法，包括步骤：提供一表面含硅 材料的衬底；
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