The Samsung engineers were able to create the eMBMS demonstration using RTD's graphical script design to drive the execution of the testsimulation on an Anritsu MD8430A LTE signaling tester.
The test chip will enable the correlation of the simulation models to the FinFET process and contains test structures, standard cells, a PLL and embedded SRAMs. The memory instances include high-density SRAMs designed to operate at very low voltages and high-speed SRAMs to validate the process performance.