Difference in extent of the Fermi energy and decrease of band-gap energy for three kinds of CNTs show that CNT with one end open is favorable for the preparation of field emission electrode.
三种不同结构的碳纳米管在费米能的增幅上有些差异，带宽减小的程度也是不同的，一端封闭的碳纳米管在F掺杂后费米能的增幅最大，说明在制备场发射电极时选择一端封闭的碳纳米管更加有利。
The optical band gap between nano-TiO 2 energy band and conduction band is3.
纳米二氧化钛能带和导带之间的带隙能为3。
In the copolymers of fluorene and DBT, the efficient energy transfer due to exciton trapping on narrow band-gap DBT sites has been observed.
在芴与dbt的共聚物中，观察到了由于激子在低带隙单体DBT位置的捕获而产生的有效的能量转移。
The metal photonic band gap structure has potentialities in the areas of high-energy accelerators, microwave vacuum electron devices, and terahertz radiation sources etc.
金属光子带隙结构在高能加速器、微波真空电子器件和太赫兹波源等方面具有重要的应用前景。
Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors.
现代电压基准建立于使用集成晶体管和带状能隙基准、掩埋齐纳二极体和结场效应晶体管。
The efficient energy transfer due to exciton trapping on the narrow band gap sites was observed.
还观察到极为有效的分子内能量转移。
The dispersion curves showed that plasma photonics crystal has the structure of photonic energy band and energy gap.
从得到的色散曲线看到等离子体光子晶体具有光子能带和能隙结构。
In comparison with that of the bulk Ge crystals, the nanocrystalline Ge show a blue shift of energy and the optical band gap increases with decreasing of the particle size of the nanocrystallites.
研究表明：镶嵌在绝缘介质薄膜中的纳米锗颗粒的能带是量子化的，随着纳米锗粒子平均尺寸的减小，其吸收带隙增加，吸收带边蓝移的程度相应增大。
Energy gap and energy band parameters were determined by using cyclic voltammetry.
介绍了用循环伏安法确定导电聚合物能隙和能带参数的方法。
Although the energy loss of ordinary multi-layer photonic crystal structures is low, the band gap is usually limited, there is also wide-wide Angle high anti-band hard.
普通多层膜系结构光子晶体的禁带内能量损失较低，可是禁带宽度通常有限，而且出现较宽的全角高反带很难。
The band structure, energy gap, the density of states and the partial density of states in the case.
在此基础上计算了化合物的能带结构和电子能态密度。
The invention provides a method for increasing the energy band gap of a hydrogenated amorphous silicon thin film, which adds fluorine elements into the amorphous silicon materials.
本发明的提供了一种增加氢化非晶硅薄膜能带隙的方法，将氟元素加入到非晶硅材料中。
The thin film of the invention is provided with wider energy band gap, and solar cells provided with the thin film can significantly improve the photoelectric conversion efficiency and stability.
本发明的薄膜具有更宽的能带隙，具有这种薄膜的太阳能电池能够显著提高光电转换效率和稳定性。
The thin film of the invention is provided with wider energy band gap, and solar cells provided with the thin film can significantly improve the photoelectric conversion efficiency and stability.
本发明的薄膜具有更宽的能带隙，具有这种薄膜的太阳能电池能够显著提高光电转换效率和稳定性。
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