The behavior of oxidation-induced stacking faults (OSF) in NCZ and CZ silicon single crystal was investigated.
采用直拉法生长普通和掺氮硅单晶，研究不同含氮浓度的晶体中氧化诱生层错（OSF）的行为。
The deep levels in electron irradiated CZ silicon single crystal grown in pure nitrogen protective atmosphere has been studied.
本文研究了电子辐照在氮保护气氛中生长的直拉硅单晶中引入的深能级。
This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.
介绍了直拉法生长单晶硅的基本原理及工艺条件。
This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.
介绍了直拉法生长单晶硅的基本原理及工艺条件。
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