Channel stress is simulated by using mask-edge dislocation model and actual stress is also measured by Raman spectroscopy.
沟道应力的模拟方法则采用掩膜版边缘错位模型(mask - edge dislocation model)，应力测量方面采用拉曼光谱法。
Dislocations consist of screw dislocation and edge dislocation.
位错有螺位错和刃位错。
The relationship between critical climb distance and temperature of straight edge dislocation was discussed.
讨论了直刃位错临界攀移距离和温度的关系，指出了表面上相对稳定的位错组态。
The relationship between critical climb distance and temperature of straight edge dislocation was discussed.
讨论了直刃位错临界攀移距离和温度的关系，指出了表面上相对稳定的位错组态。
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