The resulting electron avalanche can produce gain factors up to several hundred.
由此引起的电子雪崩可以产生数百倍的放大增益。
The pulse discharge took placed as an electron avalanche along the electric channels formed on the surface.
表面脉冲放电以电子崩过程发生，并在聚乙烯膜表面形成导电通道。
The microscopic processes of an electron avalanche are discussed and calculations are made by the statistics of collision probability.
本文以碰撞几率定律——电子自由程分布律为基础，进行统计计算，导出了碰撞次数公式及电子繁流公式。
The common models to explain APGD are electron avalanche model and streamer discharge model. APGD and DBD can be distinguished by voltage-current waveform and voltage-charge Lissajous figure.
重点阐述大气压下辉光放电（APGD）技术的现状，解释了电子雪崩模型和流注放电理论，并以电压- 电流波形图和电压-电荷李萨育图鉴别介质阻挡放电与大气压下辉光放电。
There are two kinds of theory for the vacuum surface flashover: secondary electron emission avalanche (SEEA) and electron triggered polarization relaxation (ETPR).
研究真空表面闪络过程有两类理论：二次电子发射崩溃(SEEA)和电子引发极化松弛(ETPR)。
This Paper studies interface effect of avalanche hot electron in MOS structures.
本文研究了电子束蒸铝MOS结构的热电子雪崩注入的界面效应。
This Paper studies interface effect of avalanche hot electron in MOS structures.
本文研究了电子束蒸铝MOS结构的热电子雪崩注入的界面效应。
应用推荐