High - Electron Mobility Transistor?
高电子活动性晶体管HEMT ？
After this interview, I learned about electron mobility.
通过这次访问，我了解到电子迁移。
The invention overcomes error caused by excursion of the electron mobility.
克服因电子迁移率的漂移而带来的误差。
The method can increase electron mobility between the startup state current and the channel area.
此薄膜晶体管及薄膜晶体管的制造方法可增加开启状态电流与通道区的电子迁移率。
The improvements are attributed by the large increase in average electron mobility as well as in drift velocity at 77 K.
作者认为这主要归因于低温下平均电子迁移率和电场漂移速度有很大的提高。
The deformation significantly increases electron mobility, making it possible to boost computer speed and reduce energy consumption.
形变使电子的迁移率增大，从而可能提高电脑的速度以及降低功耗。
And by the means of silicide, resist layer and aluminium multilayer metal lines, the questions of ohmic-contact and A1 electron mobility are resolved.
采用硅化物阻挡层和A1多层金属布线方法，解决了欧姆接触和铝的电迁移问题。
The model can be used to study and analyze influences of interface characteristics on electron mobility and is also a basis of circuit simulations in the future.
应用此模型，既能有效方便地研究分析界面特性对电子迁移率的影响，又为将来的电路模拟打下了基础。
Compared with the experimental results, the position, width and peak of distribution of states in gap, and also the electron mobility, cross section ot capture are obtained.
与实验比较，给出了隙态分布的位置、宽度和高度，也给出了电子迁移率和复合系数。
High electron mobility transistors (HEMT) is one of field effect transistors, which is made by modulation doped heterostructure technology and possess super high electron mobility.
高电子迁移率晶体管(HEMT)是利用异质结和调制掺杂技术制成的具有超高迁移率的场效应晶体管。
For example, the hole mobility in PMOS and the electron mobility in NMOS can be significantly enhanced by introducing appropriate compressive and tensile channel stresses, respectively.
例如，通过在沟道中引入适当的压应力和张应力能分别提高PMOS的空穴迁移率和NMOS的电子迁移率。
When 1/4 wave plate 2 and 3 are removed, the ambipolar diffusion constant and mobility of electron charge can be measured.
当去除1/4波片2和3时，则能够测量电子电荷的双极扩散常数和迁移率。
Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT).
在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用。
This unique dislocation morphology is considered coming from the electron-wind-force enhanced dislocation mobility.
分析认为这种位错形态产生于电子风力对位错运动的促进作用。
This unique dislocation morphology is considered coming from the electron-wind-force enhanced dislocation mobility.
分析认为这种位错形态产生于电子风力对位错运动的促进作用。
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