The invention is concerned with the manufacture method of the silicon epitaxial slice that is the silicon extension method of remixing arsenic substrate.
本发明公开了一种制造硅外延片的方法，即一种重掺砷衬底的硅外延方法。
The invention is concerned with the manufacture method of the silicon epitaxial slice that is the silicon extension method of remixing arsenic substrate.
本发明公开了一种制造硅外延片的方法，即一种重掺砷衬底的硅外延方法。
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