The development of the test instrument for forward-biased second breakdown for characteristics of power transistors (GIR) is described and main parameters are given.
本文对功率晶体管(GTR)正偏二次击穿测试仪的研制进行了说明，并给出了主要技术参数。
The development of the test instrument for forward-biased second breakdown for characteristics of power transistors (GIR) is described and main parameters are given.
本文对功率晶体管(GTR)正偏二次击穿测试仪的研制进行了说明，并给出了主要技术参数。
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