Sheldon:And of course the answer is giant magnetoresistance.
竞赛的目的是回答出正确的答案。
The contents for 1998~1999 include: (1) multilayer giant magnetoresistance materials;
这次内容包括：（1）多层膜巨磁电阻材料；
Giant magnetoresistance (GMR) materials is applied to feebleness magnetic field sensor.
巨磁电阻(GMR)材料可应用于弱磁场高灵敏度磁传感器。
A new research field of magnetoelectronics has been developed since the discovery of giant magnetoresistance.
巨磁电阻效应的发现开拓了磁电子学的新领域。
Changing of material resistance with applied magnetic field intensity is called Giant magnetoresistance (GMR).
磁电阻效应是指材料的电阻随外加磁场变化而变化的现象。
New magneto- electric components made from giant magnetoresistance(GMR)materials have been successfully applied to computer storage.
用巨磁电阻（GMR）材料构成的磁电子学新器件，已成功地应用于计算机存储领域。
With the increasing research on giant magnetoresistance (GMR), convenient and fast testing system has become the basis of research on GMR.
随着巨磁电阻效应(GMR)研究的广泛开展，方便、快速的磁电阻测试已成为研究GMR效应的基础。
The application prospects of magnetic nanowires for magnetic recording, giant magnetoresistance, quantum disk and magnetic memory were discussed.
阐述了一维磁纳米线在磁记录、巨磁电阻、量子磁盘及高密度存储等领域的应用前景。
Materials with giant magnetoresistance effect have been extensively studied because of their potential application in magnetic recording and sensors.
由于巨磁电阻效应在磁记录设备和传感器的潜在应用，具有该效应的材料得到了广泛地研究。
Since a magnetic field changes the resistance of ordinary metals by only a fraction of a percent, they dubbed this phenomenon "giant magnetoresistance," or GMR.
由于磁场变化对普通金属只会造成远远不到百份之一的电阻变化，这种现象被称为“巨磁电阻”或巨磁阻gmr。
Since a magnetic field changes the resistance of ordinary metals by only a fraction of a percent, they dubbed this phenomenon "giant magnetoresistance, " or GMR.
由于磁场变化对普通金属只会造成远远不到百份之一的电阻变化，这种现象被称为“巨磁电阻”或巨磁阻GMR。
Materials with giant magnetoresistance effect (GMR) have been extensively studied because of their potential applications in magnetic recording and sensors.
由于巨磁阻效应材料在磁记录设备和传感器的潜在应用，具有该效应的材料得到了广泛地研究。
The discovery of giant magnetoresistance effect has attracted much attention to research of magnetic transport in inhomogeneous systems, which depends on spin of electrons.
巨磁阻效应的发现，导致了一个如何正确看待非均匀系统中磁输运性质的问题，并使电子输运状况依赖于自旋内禀属性的物理观念逐渐形成。
The particular magnetic effects, which are the giant magnetoresistance effect and the magnetic relaxation effect, of the granular films at low temperature have been studied.
概括介绍了金属软磁合金多层薄膜巨磁电阻效应和巨磁阻抗效应的研究和应用，对多层薄膜的制备方法和表征手段作了介绍。
The giant magnetoresistance (GMR) effect allows drives like this one, less than an inch in diameter, to detect the tiny magnetic fields that store data in portable electronic devices.
巨磁电阻(GMR)效应使这样一个驱动器的直径不到一英寸，检测在便携式电子设备中存储数据的微小的磁场。
Compared with anisotropic magnetoresistance effect and giant magnetoresistance effect, the sensitivity using HFMI technique is much higher at room temperature and in low magnetic field.
与各向异性磁阻效应和巨磁阻效应相比，高频磁阻抗效应传感技术灵敏度高、无巴克豪森噪声、适合常温、低磁场检测。
This paper introduced the giant magnetoresistance materials and their applications to magnetoresistance sensors, read head for high density magnetic recording and magnetic random access memory.
介绍了巨磁电阻材料在高密度读出磁头、磁传感器、磁性随机存储器等领域的应用。
Comparing to the influence of the bias, the variation of the giant-magnetoresistance induced by change of temperature is smaller.
与偏压的影响相比，温度的改变所引起的巨磁电阻的变化相对较小，只有在温度变化较大时才有显著的影响。
A series of giant positive magnetoresistance of magnetic multilayer structure were fabricated by ion-beam sputtering in high vacuum with applied magnetic field and treatment.
采用离子束溅射方法制备了正巨磁电阻多层膜，在制备过程中采用外加磁场和退火处理。
A series of giant positive magnetoresistance of magnetic multilayer structure were fabricated by ion-beam sputtering in high vacuum with applied magnetic field and treatment.
采用离子束溅射方法制备了正巨磁电阻多层膜，在制备过程中采用外加磁场和退火处理。
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