The results are explained by a hole trapping-weak bonds breaking model.
本文由空穴俘获-弱键破裂模型讨论了实验结果。
Thus, the relationships of oxide charge generation, including electron trapping and hole trapping effects, with different stress voltages and channel lengths are analyzed.
然后对不同应力电压、不同沟道长度下氧化层陷阱电荷（包括空穴和电子陷阱俘获）的产生做了进一步的分析。
Thus, the relationships of oxide charge generation, including electron trapping and hole trapping effects, with different stress voltages and channel lengths are analyzed.
然后对不同应力电压、不同沟道长度下氧化层陷阱电荷（包括空穴和电子陷阱俘获）的产生做了进一步的分析。
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