It can be used for single ion implantation, ion beam mixing, single ion or reactive ion beam sputter-deposition and ion beam enhanced deposition.
可用于单离子注入，离子束混合，单离子或反应离子束溅射淀积以及离子束增强淀积。
It can be used for single ion implantation, ion beam mixing, single ion or reactive ion beam sputter-deposition and ion beam enhanced deposition.
可用于单离子注入，离子束混合，单离子或反应离子束溅射淀积以及离子束增强淀积。
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