Using a new kind of liquid-phase epitaxy technology, V-channeled substrate inner stripe visible GaAlAs semiconductor laser with a large optical cavity is fabricated.
采用一种新的液相外延工艺，研制出了具有大光胶结构的V型槽衬底内条形可见光发射半导体激光器。
The growth processes of liquid-phase epitaxy will be discussed in some detail, as crystal growth is a necessary step for the realization of integrated optics using.
再略为详细地讨论液相外延生长过程，因为晶体生长是实现集成光路使用的必不可少的一个环节。
The growth processes of liquid-phase epitaxy will be discussed in some detail, as crystal growth is a necessary step for the realization of integrated optics using.
再略为详细地讨论液相外延生长过程，因为晶体生长是实现集成光路使用的必不可少的一个环节。
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