The diamond growth rate may be enhanced by the substrate bias due to the changes of atomic hydrogen concentration and the increase of mean electron temperature.
偏压的升高可提高电子平均温度及衬底表面附近氢原子的相对浓度；
The diamond growth rate may be enhanced by the substrate bias due to the changes of atomic hydrogen concentration and the increase of mean electron temperature.
偏压的升高可提高电子平均温度及衬底表面附近氢原子的相对浓度；
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