Burn-out of a microwave power device due to the poor bonding between beryllium oxide and base metal sink was investigated using Sound Scanning technique.
利用声学扫描检测技术，提示了热烧毁的微波功率器件氧化铍陶瓷基片与底座金属散热片的焊接不良现象；
A novel structure has been designed and applied in metallization system of microwave power device, in which backflow effect is taken to increase the electromigration resistance.
在回流动力学理论和实验研究的基础上，将回流加固结构应用于实际微波功率器件。
A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.
设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。
Basing on analysis and research of the power control mode of the microwave drying device, pulsed and continuous power control mode were introduced in the test.
在对微波干燥试验装置中的功率控制方式进行分析和研究的基础上，采用了间歇式和连续式两种功率控制方式进行了试验。
In recent years, experiments show that in the plasma loaded high power microwave device may obtain much higher interaction efficiency and output power than the ones absence of plasma.
近年来实验研究发现，等离子体加载高功率微波器件后，器件的输出功率和互作用效率得到显著的提高。
Recently, duce to the improvements of semiconductor power device technology's and dropping of costs, more and more solid state transmitters have been adopted by various microwave systems.
近年来，由于半导体功率器件工艺的进步和成本的降低，微波固态发射机越来越多地为各类微波系统所采用。
The use of a background plasma in a dielectric Cherenkov maser can effectively increase the efficiency and the microwave power output of the device.
在介质切伦可夫脉塞中加入背景等离子体可有效地提高器件的效率和微波输出功率。
The High Power Microwave (HPM) technology as a combination of pulse power technology, plasma physics and vacuum electron device is a rising science in the 1970s.
高功率微波（HPM）技术是上世纪70年代以来产生的一门新兴学科，是脉冲功率技术与等离子体物理学及电真空技术相结合的产物。
The High Power Microwave (HPM) technology as a combination of pulse power technology, plasma physics and vacuum electron device is a rising science in the 1970s.
高功率微波（HPM）技术是上世纪70年代以来产生的一门新兴学科，是脉冲功率技术与等离子体物理学及电真空技术相结合的产物。
应用推荐