Based on the double bridge structure of microelectronics test pattern, the method of defect model parameter extraction is presented in this paper.
基于微电子测试双桥结构，本文给出了缺陷特征参数提取方法。
The factors of MOS transistor in the saturation region are analyzed, the mismatch models are optimized, and the model parameter extraction is done by least squares curve fitting method.
通过分析MOS管在饱和区失配因素，优化MOS管失配模型，提出用最小二乘曲线拟合法进行相关模型参数提取。
The equivalent circuit, structure, and parameter extraction of the model were described, and it was realized with the simulation tool of PSIM package.
描述模型的等效原理、构成和参数提取过程，并在PSIM软件包下建立其等效电路。
We simulate real extraction process in the laboratory (including various of abnormal conditions) and set up on-line testing model according to each process parameter index content changes feedback.
由实验室模拟真实提取过程(含各种异常情况)，根据各过程参数反馈指标成分的含量变化，建立在线检测模型。
The existing problems of optimal parameter extraction are discussed for device model in this paper.
本文分析了目前器件参数优化所存在的问题。
The paper mainly introduce the DC parameter extraction process of BSIM3 model and the model improvement for RF simulation.
最后给出了模型改进前后与测试的S参数的对比曲线。
The paper mainly introduce the DC parameter extraction process of BSIM3 model and the model improvement for RF simulation.
最后给出了模型改进前后与测试的S参数的对比曲线。
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