Although JFFS was very useful in its time, its wear-leveling algorithm tended to shorten the life of NOR flash devices.
尽管JFFS在早期非常有用，但是它的平均读写算法容易缩短NOR flash设备的寿命。
A novel positive charge pump for NOR flash memory with high driving capability, high precision and low power consumption, is proposed in this paper.
提出一种适用于NOR结构快闪存储器应用的，具有大驱动能力、低功耗和高精度特性的电荷泵系统。
NOR flash memory can typically be programmed a byte at a time, whereas NAND flash memory must be programmed in multi-byte bursts (typically, 512 bytes).
NOR flash内存通常一次可以编写一个字节，而NAND flash内存必须编写多个字节(通常为512字节)。
If you use the CPLD method of configuring the FPGA, you can store both the FPGA bitstream and the required code in a single NOR flash chip; it's probably the simplest system design.
如果使用CPLD方法配置FPGA，则可在一个NOR闪存芯片中存储fpga比特流和所需的代码；这可能是最简单的系统设计。
NOR-based flash is the older technology that supported high read performance at the expense of smaller capacities.
基于NOR的flash技术比较早，它支持较高的读性能，但以降低容量为代价。
In a NOR device, each block in the flash memory can be erased up to 100,000 times. NAND flash memories can be erased up to one million times.
在NOR设备中，flash内存中的每个块可被擦除100,000次，而在NAND flash内存中可达到一百万次。
However, many other types of memory are RAM as well (ie, Random Access memory), including most types of ROM and a kind of flash memory called NOR-Flash.
然而，许多其他类型的内存以及内存(即随机存取记忆体)，其中包括大多数类型的ROM和一种所谓的NOR快闪记忆体闪光。
The hammer fell, but there followed neither flash nor sound;
撞针已经落下，可是既没有火光，也没有响声；
No UV nor IR ray. Best heat reduce module design, no flash and glare, no breakable glass.
无UV（紫外线）与IR（红外线）輻射，最佳化减热的模组化机构设计，无灯丝和玻璃外壳，没有传统。
No UV nor IR ray. Best heat reduce module design, no flash and glare, no breakable glass.
无UV（紫外线）与IR（红外线）輻射，最佳化减热的模组化机构设计，无灯丝和玻璃外壳，没有传统。
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