In order to describe the actual chaotic systems exactly, a simple modified Chua s circuit is presented, which includes an asymmetric nonlinear resistive element.
为了更确切地描述实际系统中的混沌现象，提出了一种变形蔡氏电路，它含有一个不对称非线性阻性元件。
The magnetic field generators may preferably be realized by excitation wires (11, 13) and the sensor element (12) by a magneto-resistive element, for example a GMR element.
所述磁场发生器可以优选地通过激励线圈(11,13)实现，所述传感器元件(12)通过磁阻元件，例如gmr元件实现。
Some essential aspects, such as linear pneumatic resistive element design and experimental studies, signal condition and transformation, etc... were investigated in the paper.
研究工作包括线性气体阻尼元件的设计、优化和实验研究，信号电测和变送，以及流量测量系统的设计和特性分析。
Pulse width modulation is used to reduce the total power delivered to a load without resulting in loss which normally occurs when a power source is limited by a resistive element.
脉宽调制技术是用来降低总功率交付给了负荷，没有造成损失，这是通常发生时，电源是有限的，由电阻芫件。
Removal of the heat resistive element (2) and the electrode (3) is prevented by suppressing the diffusion of the metal component from the electrode (3) to the heat resistive element (2).
通过抑 制上述金属成分从电极（3）向发热电阻器（2）的扩散，能够防止发热电阻器（2）及电极（3）的剥离。
Well, it all comes down to simple physics and two small contraptions: resistive heating element and an aluminum tube .
那么，归根究柢，这一切都是两个小程控物理学和简单：电阻加热元件及铝筒。
The resistive memory cell comprises a first gate, a second gate, a common doped region, a contact plug, a bit line and a resistive memory element.
所述电阻式存储器单元包括第一栅极、第二栅极、共用掺杂区域、接触窗插塞、位线以及电阻式存储器元件。
The device USES DC current to heat the resistive heating element, and is operated at relatively low voltage levels and low current levels.
该装置使用DC电流来加热电阻加热元件，并且以相对低的电压水平和低的电流水平操作。
At least one of the plurality of resistive memory cells may include a switching device and a data storage element including a variable resistor connected in parallel with the switching device.
多个电阻存储器单元中的至少一个可包括开关设备和数据存储元件，该数据存储元件包括与开关设备并联连接的可变电阻器。
Moreover, the resistive memory element is connected between the contact plug and the bit line.
此外，电阻式存储器元件连接于接触窗插塞与位线之间。
Moreover, the resistive memory element is connected between the contact plug and the bit line.
此外，电阻式存储器元件连接于接触窗插塞与位线之间。
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