In this paper, charge retention characteristics of MNOS memory structures is investigated by a discharge model of the shallower trap.
通过浅在储陷阱的电荷泄漏模型，对MNOS结构的保留特性进行研究。
Image-Retention Phenomenon, which exists in different kinds of LCDs is mostly caused by Ionic Charge Effect.
影像残留显示现象存在于各类的LCD中，且大多归纳为离子效应所引起。
To evaluate the properties of alum and PAC used as AIDS of sizing, drainage and retention, it is necessary to study the charge characteristic of the stock added alum and PAC.
添加硫酸铝和聚合氯化铝的纸浆的电荷特征，是决定铝化物发挥功效的重要因素。
The ability to charge retention, photosensi t ivi ty and preparation of the a-Si:H films are discussed.
讨论了非晶硅膜的电荷保持能力、感光特性以及膜的制备。
Comparing with the existing charge-retention driving circuit, it has the merits of simplified structure, shorter common conduction time, better immunity to interference and reduced driving loss.
该文提出了一种新颖的电荷自维持电路，它比现有的电荷自维持电路在结构上更加简单，共态导通的时间更加短，抗干扰能力更强，驱动损耗更小。
Comparing with the existing charge-retention driving circuit, it has the merits of simplified structure, shorter common conduction time, better immunity to interference and reduced driving loss.
该文提出了一种新颖的电荷自维持电路，它比现有的电荷自维持电路在结构上更加简单，共态导通的时间更加短，抗干扰能力更强，驱动损耗更小。
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