• The gain of the APD can be controlled by the magnitude of the reverse bias voltage.

    APD的增益可以由反向偏置电压的幅度来控制。

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  • Black lines are without external bias and red lines are with and external reverse bias voltage.

    黑线表示没有偏压,红线表示有一个反向偏置电压。

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  • The Usoff and Ir are respectively the reverse bias voltage in the off-state and the reverse current through the switch.

    其中Uoff在断态时的反向偏置电压,ir是流过开关的反向漏电流。

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  • A high reverse bias voltage creates a strong internal electric field, which accelerates the electrons through the silicon crystal lattice and produces secondary electrons by impact ionization.

    一个高反向偏置电压产生一个强有力的内部电场,加速了通过硅晶格的电子,并通过碰撞电离产生二次电子。

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  • Measuring the reverse bias current of an APD requires an instrument that can measure current over a wide range as well as output a voltage sweep.

    测量APD的反向偏置电流需要一种能够在很宽范围内测量电流并且能输出扫描电压的仪器。

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  • Measure the reverse breakdown voltage by sourcing a specified re verse current bias, then measuring the voltage drop across the diode.

    通过施加规定的反向偏流,然后测量二极管两端的电压,即可测得反向偏置电流。

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  • Measure the reverse breakdown voltage by sourcing a specified re verse current bias, then measuring the voltage drop across the diode.

    通过施加规定的反向偏流,然后测量二极管两端的电压,即可测得反向偏置电流。

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