The nitride semiconductor light-emitting device has improved light extraction efficiency.
该氮化物半导体发光器件具有改善了的光取出效率。
Therefore the quality and productivity of the semiconductor light-emitting device (100) having a reflecting layer (10) for improving the luminous efficiency can be significantly improved.
这样可大幅度提高为提高发光效率设置了反射层10的半导体发光元件100的质量和生产性。
Semiconductor device, semiconductor device manufacturing method, high carrier mobility transistor and light emitting device.
半导体器件，半导体器件制造方法，高载流子迁移率晶体管和发光器件。
Semiconductor element, organic transistor, light-emitting device, and electronic device.
半导体元件，有机晶体管，发光器件，和电子器件。
A mounting substrate for a semiconductor light emitting device includes a solid metal block having first and second opposing metal faces.
一种用于半导体发光器件的安装基板包括具有第一和第二相对金属表面的固体金属块。
It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method.
本发明的目的是提供一种半导体器件，具体地，提供一种可通过湿法容易地制造的发光元件。
With this structure, a semiconductor light emitting device having high brightness and excellent color rendering properties can be provided.
采用这种结构，可以给出具有高亮度和极好显色性的半导体发光器件。
With this structure, a semiconductor light emitting device having high brightness and excellent color rendering properties can be provided.
采用这种结构，可以给出具有高亮度和极好显色性的半导体发光器件。
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