Single Hard Errors and functional error were observed in SRAMs under proton irradiation. The explanation is reasonable for the relation between SHE and device integration scale.
实验观察到质子也可以导致存储器出现单个位的硬错误和器件功能错误，并对单个位的硬错误与器件集成度的关系提出了合理的解释。
Single Hard Errors and functional error were observed in SRAMs under proton irradiation. The explanation is reasonable for the relation between SHE and device integration scale.
实验观察到质子也可以导致存储器出现单个位的硬错误和器件功能错误，并对单个位的硬错误与器件集成度的关系提出了合理的解释。
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