The structure, which is fabricated on the SOI material, and its fabrication process have been designed based on the theoretical analysis.
传感器的结构建立在SOI材料上，在关键工艺中采用硅熔融键合技术。
In order to improve the uniformity of the thin film of silicon, the interface of hetero-junction of SOI material was used as the interface of etch self-stopping.
为了提高电容式触觉传感阵列的性能，本工作以SOI材料中异质结界面作为深槽腐蚀中腐蚀自停止界面，以提高硅膜片的表面平整度和厚度均匀性。
SOG material, as traditional SOI material, has much excellent electronics property, for example, SOG circuit has the advantage of high switch speed, high density, low voltage, low power and so on.
SOG材料与传统SOI材料一样，拥有许多优良的电学性能，例如SOG电路具有高开关速度、高密度、低压和低功耗等优点。
An arrayed waveguide grating (AWG) demultiplexer with total internal reflection (TIR) mirrors is designed based on silicon-on-insulator (SOI) material.
设计了一种基于绝缘体上的硅材料的全内反射型阵列波导光栅解复用器件。
But due to an insulating layer in its structure, the tolerance of total dose irradiation of SOI is poorer than normal silicon material.
但由于绝缘埋层的引入，使得材料本身的抗总剂量辐照能力反而不如体硅材料。
But due to an insulating layer in its structure, the tolerance of total dose irradiation of SOI is poorer than normal silicon material.
但由于绝缘埋层的引入，使得材料本身的抗总剂量辐照能力反而不如体硅材料。
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