With sufficient forward bias, the diffusion capacitance can easily exceed the space charge region capacitance.
当正向偏压足够高时，扩散电容很容易超过空间电荷压电容。
The field-enhanced carrier generation of deep level centers in semiconductor space charge region has been studied.
本文研究了半导体表面空间电荷区中的深能级中心的电场增强载流子产生效应；
Experiment results show that the application of an electric field causes nonuniform distribution of the density of the defects in the space charge region.
实验结果表明，辐照电场的存在将造成缺陷在空间电荷区的不均匀分布。
Experiment results show that the application of an electric field causes nonuniform distribution of the density of the defects in the space charge region.
实验结果表明，辐照电场的存在将造成缺陷在空间电荷区的不均匀分布。
应用推荐