The optical band gap between nano-TiO 2 energy band and conduction band is3.
纳米二氧化钛能带和导带之间的带隙能为3。
Results indicate that the optical band gap of the CN x films is decreased with the increasing nitrogen concentration, accompanied with the reflectance increase of the films.
结果表明：随着薄膜中氮含量的增加，碳氮薄膜的光学禁带宽度减小，红外反射率增加。
The ultraviolet absorption peak narrows, absorption intensity increases, the absorption margin becomes steep and moves to longer wavelength, the optical band gap decreases as well.
紫外吸收峰变窄，强度增加，吸收边变得陡峭并向长波方向移动，光学带隙降低。
In comparison with that of the bulk Ge crystals, the nanocrystalline Ge show a blue shift of energy and the optical band gap increases with decreasing of the particle size of the nanocrystallites.
研究表明：镶嵌在绝缘介质薄膜中的纳米锗颗粒的能带是量子化的，随着纳米锗粒子平均尺寸的减小，其吸收带隙增加，吸收带边蓝移的程度相应增大。
The photonic band gap materials have wide potential applications in fabricating new type of optical devices.
光子晶体可以用来制备全新原理、高性能的光学器件，具有广阔的应用前景。
Meanwhile the composite exhibits the optical features of a semiconductor with direct band gap.
这种复合结构体系具有直接带隙半导体的光学特性。
The band gap, linear refractive indices and absorption coefficients fundamental optical constants of the film were obtained through optical transmittance measurements.
用光学透射测量方法得到了该薄膜材料的基本光学常数（带隙、线性折射率、线性吸收系数）。
Photonic crystals(PCs) has the properties of photonic band-gap(PBG) which is similar with semiconductor, because of this, it is a hotspot in optical communication and optical device.
光子晶体由于能够产生与半导体能带结构类似的光子禁带，成为了国内外光通信和光学器件方面研究的热点。
It also showed that the optical absorption edge of the annealed film appeared shifted towards the longer wavelength side and the band gap decreased by 0.
光学性质显示退火处理的薄膜吸收边缘明显的向长波的方向移动，发生红移现象，而且禁带宽度减少了0。
The transmittance of light is forbidden in a wavelength range called photonic band gap. Photonic crystals have broader application prospect than common optical materials.
光子晶体的基本特征是具有光子带隙，频率落在带隙中的光将不能传播，这使其比普通光学材料具有更广泛的应用。
This paper reviews the research progress in both theoretical and experimental aspects of band-to-band optical absorption transition effect in narrow gap semiconductor HgCdTe.
本文主要论述窄禁带半导体碲镉汞的带间光吸收跃迁的理论和实验。
The theoretical and experimental aspects of inter-band optical transitions are discussed for narrow gap semiconductors.
讨论窄禁带半导体带间光吸收跃迁的理论和实验。
The waveguide is preferably in the form of an optical fiber having a cladding that contains a photonic band gap structure which in turn envelopes a light conducting, hollow core portion.
所述波导采用的形式最好是具有包含光子带隙结构的包层而 该结构又包住传导光的空芯部分的光纤。
In its random structure the optical processes will be enhanced by localization or random walking of coherent light; while photonic band-gap appears in its regular structure.
如无规亚光学波长结构的光子局域或随机行走增强，有规亚光学波长结构的光子带隙。
The optical element forms dual mode structure in low symmetry. The invention raises structural performance band gap of photon crystal, and obtains even structure of photon crystal in large area.
能形成低对称性的双模结构，有利于光子晶体带隙结构性能的提高，获得大面积均匀的光子晶体结构。
The optical element forms dual mode structure in low symmetry. The invention raises structural performance band gap of photon crystal, and obtains even structure of photon crystal in large area.
能形成低对称性的双模结构，有利于光子晶体带隙结构性能的提高，获得大面积均匀的光子晶体结构。
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