So the problem is coming that SiO gaseous unstable matter is made in the interface of silicon and silicon dioxide due to silicon and oxygen incomplete reaction when making thermal oxide layer.
因此随之而来的问题是：由于在形成热氧化物的时候，由于硅和氧的不完全反应，在硅和二氧化硅的界面会生成一氧化硅的气态不稳定物质。
The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the source and the drain.
第一个重要的来自热氧化组薄膜是栅氧化层，在它之下，源和漏之间就能形成导电通道。
It shows severe hump without capping silicon nitride layer due to moisture diffusion during thermal anneal after inter layer oxide deposition by LPCVD.
它表明没有覆盖硅氮化层的严重驼峰取决于经过LPCVD的内部涂层氧化沉淀后化学处理期间的湿度扩散。
For devices formed on an oxide isolation layer, the poly - filled trench desirably penetrates this isolation layer thereby improving thermal conduction from the active regions to the substrate.
对于形成在氧化物隔离层上的器件，多晶填充的沟槽理想地穿透该隔离层从而改进从有源区到衬底的热传导。
For devices formed on an oxide isolation layer, the poly - filled trench desirably penetrates this isolation layer thereby improving thermal conduction from the active regions to the substrate.
对于形成在氧化物隔离层上的器件，多晶填充的沟槽理想地穿透该隔离层从而改进从有源区到衬底的热传导。
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