The reasons of high voltage organic dielectric capacitor should not available to be metallized are analyzed in the paper, including high energy, polarization thin film and high loss.
说明了高压有机介质电容器不宜采用金属化的三个原因：能量高、化膜薄、耗大。
The key process technology of integrated thin - film resistor, capacitor and passive assembly was introduced.
介绍了国外集成薄膜电阴器、电容器及无源组件的关键工艺技术的研究情况。
The present invention provides a thin film transistor substrate realizing reduced interlayer short-circuit defects in a capacitor, and a display device having the thin film transistor substrate.
本发明提供了一种薄膜晶体管衬底和具有这种薄膜晶体管衬底的显示装置，这种薄膜晶体管衬底能够减小电容器中的层间短路缺陷。
The present invention provides a thin film transistor substrate realizing reduced interlayer short-circuit defects in a capacitor, and a display device having the thin film transistor substrate.
本发明提供了一种薄膜晶体管衬底和具有这种薄膜晶体管衬底的显示装置，这种薄膜晶体管衬底能够减小电容器中的层间短路缺陷。
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