The emission threshold voltage can thus be decreased.
降低发射阈值电压。
A disadvantage is in the increased threshold voltage.
缺点是使阈值电压升高。
The transistor element comprises a predefined threshold voltage.
晶体管元件包括预定的阈值电压。
The body region was doped high to increase the back gate threshold voltage.
增加体区掺杂，以提高背栅阈值电压；
A threshold voltage model of DMOS by radiation induced positive spatial charge is proposed.
提出了一种DMOS辐照正空间电荷阈值电压模型。
We deduced a expressions for threshold voltage temperature coefficient of short channel MOST.
推导了了一个短沟道MOST阈值电压温度系数表达式；
In addition, the threshold voltage is capable of being finely tuned with a proper gate bias .
除此之外，由于强烈的闸极耦合效应，在分离的上闸极加上适当的偏压，便可精确地调控临限电压。
Deduced has been a relationship between the threshold voltage of MOSFET and the radiation dose rate.
计算了MOSFET阈电压与辐射剂量率之间的关系。
Threshold voltage window is approx 17V, and this transistor has nondestructive readout characteristic.
这种晶体管的阈值电压窗口约17伏，且具有不破坏的读出特性。
Our results showed that Fick's second law can successfully explain the variations of threshold voltage.
不论是在有无偏压实验条件下，气体扩散模型可以成功解释氨在五苯环薄膜中的扩散行为。
The temperature compensated reference voltage stabilizes the lockout threshold voltage and hysteresis quality.
通过对自产生的基准电压进行温度补偿确保了锁定阈值电压和迟滞量稳定。
In the case of storing multiple states of data, the threshold voltage window is divided into the number of states.
在存储多个数据状态的情况下，阈值电压窗被划分为状态的数目。
A modified algorithm for evaluation of the threshold voltage in MOSFET with non-uniformly doped substrate is presented.
提出一种改进了的计算衬底非均匀掺杂mos器件开启电压的算法。
We mainly focus on the threshold voltage shift under subsequent positive bias temperature (PBT) stress after the preceding NBT.
主要集中在对器件施加nbt和随后的PBT应力后器件阈值电压的漂移上。
The relative sizes of the first and second gate conductors in a given transistor control the threshold voltage for the transistor.
在给定晶体管中的第一栅极导体和第二栅极导体的相对尺寸控制晶体管的阈值电压。
When it reaches the threshold voltage of the reset chip, it then asserts the reset once it reaches the time-out period of the chip.
当达到复位芯片的阈值电压时，一旦达到芯片的延时时间便输出复位信号。
The result shows that the motion threshold voltage declines due to the PTFE spacer, and is affected obviously by the spacer shapes.
结果表明，PTFE绝缘子的存在降低了微粒运动起始电压，而且绝缘子的形状也会影响绝缘子附近微粒运动的起始电压。
The threshold voltage and the peak of proportional difference for MOSFET devices will change after the uniform high electric field stress.
在均匀的高电场应力下，MOSFET器件的阈值电压和输出特性的比例差分峰值会有所改变。
Its function is to provide a latching switch action upon sensing an input threshold voltage, with reset accomplished by an external clock signal.
它的功能是当感应到输入电压界限时提供一个锁存开关，通过外部时钟信号完成复位。
In this paper, the threshold voltage of binary digital baseband transmission system on graph is explained, so the concept's meaning is more clear.
本文对二进制数字基带传输系统的阈值电压进行了图象上的解释，从而使该概念的意义更加清晰。
The simulation presupposes that it is possible to develop new MOS thinfilm transistors with crystal silicon substrate and lower threshold voltage.
模拟计算表明，利用薄体效应，可以形成以单晶硅为衬底的，阈电压较低的新型薄膜MOS晶体管。
One new domino logic circuit whose architecture is based on full PMOS sleep transistors and a dual threshold voltage CMOS technology is introduced.
介绍一种全部由PMOS休眠管实现的双阈值电压多米诺逻辑电路。
The influence of decomposition temperature on the threshold voltage is consistent with the principle of material design of thermochemical hole burning.
理论分析表明，阈值电压对热分解温度的依赖关系反映了活化能对热化学烧孔反应速度的影响。
DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocity saturation effect is considered.
本文首先建立了一个SOIMOSFET器件的直流漏电流模型和阈值电压模型，模型考虑了速度饱和效应。
Then , an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical ( qm ) effects.
给出了电子密度的隐式表达式和阈电压的显式表达式，它们都充分考虑了量子力学效应。
By resolving Poisson equation, the mathematical expression of the threshold voltage model of DMOS by radiation induced positive spatial charge is obtained.
求解泊松方程，由此给出dmos辐照正空间电荷阈值电压模型表示式。
FIG. 7 depicts an example set of threshold voltage distributions in a multi-state device with direct programming from the erased state to a programmed state.
图7描绘多状态装置中关于从经擦除状态到经编程状态的直接编程的阈值电压分布的示范性集合。
FIG. 8 depicts an example set of threshold voltage distributions in a multi-state device with two-pass programming from the erased state to a programmed state.
图8描绘多状态装置中关于从经擦除状态到经编程状态的双通过编程的阈值电压分布的示范性集合。
The relationship between the threshold voltage and the peak of proportional difference, and between the interface trap density and stress time are also acquired.
得到了阈值电压和比例差分峰值，界面陷阱密度和应力时间的关系。
It is found that the change of threshold voltage value fits in exponential law with absorbed dose, which is caused by the effect of space charge and interface charge.
产生这种现象的原因是场效应管氧化物中的空间俘获电荷与吸收剂量近似成线性变化，对阈值电压变化和吸收剂量有近似线性的改变；
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