Voltage threshold capability checks for logic level degradation.
阈值电压的逻辑电平降解能力的检查。
The study result shows that the planar film structure is conformable for FEE cathode, because it has low voltage threshold and small range of energy distribution of the emitted electrons.
分析结果表明，宽带隙平面薄膜结构用作场致电子发射阴极，具有发射电压的阈值低，发射电子的能量分布范围小等优点。
Recondition is a slow, deep discharge that drains the cell to a voltage threshold below one volt must be discharged to at least 0.6 volts per cell to dissolve the more resistive crystalline build-up.
恢复是一种缓慢的，深度的放电过程，它放电使电芯达到一个电压极限，一个电芯一定要由一伏的电压至少放电至0.6伏以下，才能溶散更多的抗性晶体。
If the noise level is just below the threshold needed to flip the state of the system, even a tiny input voltage is enough to change the system's state.
如果噪音的等级正好比转换系统状态的极限低，一个非常小的输入电压就足以改变系统的状态。
In this paper, the threshold voltage of binary digital baseband transmission system on graph is explained, so the concept's meaning is more clear.
本文对二进制数字基带传输系统的阈值电压进行了图象上的解释，从而使该概念的意义更加清晰。
FIG. 7 depicts an example set of threshold voltage distributions in a multi-state device with direct programming from the erased state to a programmed state.
图7描绘多状态装置中关于从经擦除状态到经编程状态的直接编程的阈值电压分布的示范性集合。
FIG. 8 depicts an example set of threshold voltage distributions in a multi-state device with two-pass programming from the erased state to a programmed state.
图8描绘多状态装置中关于从经擦除状态到经编程状态的双通过编程的阈值电压分布的示范性集合。
The polluted voltage signal was denoised in the case, and the results show that threshold selection is directly related to the quality of de-noising.
在例子中对染噪的电压信号进行消噪处理，结果表明阈值的选取直接关系到消噪的质量。
Going back to the clipping diodes now, the diodes have no effect until the signal at the output is greater than the threshold voltage of the diode.
回到剪辑二极管现在，二极管没有影响到信号输出大于阈电压的二极管。
When the switching voltage is at or below 1.5v, connecting an external resistive divider to this input will lower the UVLO threshold.
当开关电压等于或低于1.5V的，连接一个外部电阻分压器来此输入UVLO阈值将降低。
Threshold voltage window is approx 17V, and this transistor has nondestructive readout characteristic.
这种晶体管的阈值电压窗口约17伏，且具有不破坏的读出特性。
The emission threshold voltage can thus be decreased.
降低发射阈值电压。
The simulation presupposes that it is possible to develop new MOS thinfilm transistors with crystal silicon substrate and lower threshold voltage.
模拟计算表明，利用薄体效应，可以形成以单晶硅为衬底的，阈电压较低的新型薄膜MOS晶体管。
The threshold voltage and the peak of proportional difference for MOSFET devices will change after the uniform high electric field stress.
在均匀的高电场应力下，MOSFET器件的阈值电压和输出特性的比例差分峰值会有所改变。
Then , an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical ( qm ) effects.
给出了电子密度的隐式表达式和阈电压的显式表达式，它们都充分考虑了量子力学效应。
Adding 3% of these compounds to a polar and a nonpolar liquid crystal mixtures significantly reduces their threshold voltage while only causes a modest increase in viscosity.
往一种极性和非极性液晶混合物中添加3%的这些化合物，可以大大降低液晶混合物的阈值电压，而只引起粘度的小量增加。
DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocity saturation effect is considered.
本文首先建立了一个SOIMOSFET器件的直流漏电流模型和阈值电压模型，模型考虑了速度饱和效应。
Layout for measuring the uniformity of threshold voltage has been designed, including structures for measuring many material and process parameters. This Layout is adaptable to many process.
本文设计了一套适合多种工艺的阈值电压均匀性研究测试版图，包括多种材料参数和工艺参数测试图形。
It is found that the change of threshold voltage value fits in exponential law with absorbed dose, which is caused by the effect of space charge and interface charge.
产生这种现象的原因是场效应管氧化物中的空间俘获电荷与吸收剂量近似成线性变化，对阈值电压变化和吸收剂量有近似线性的改变；
We mainly focus on the threshold voltage shift under subsequent positive bias temperature (PBT) stress after the preceding NBT.
主要集中在对器件施加nbt和随后的PBT应力后器件阈值电压的漂移上。
The influence of decomposition temperature on the threshold voltage is consistent with the principle of material design of thermochemical hole burning.
理论分析表明，阈值电压对热分解温度的依赖关系反映了活化能对热化学烧孔反应速度的影响。
In conventional CMOS charge pump circuits, the pumping high voltage is limited by MOS threshold voltage, so that it can not use less cascade stages to pull up a high voltage which we want to generate.
在传统的CMOS电荷泵电路中，电荷泵输出的电压受MOS管的阈值电压限制，所以当要求电荷泵的输出电压较高时，则不得不连很多阶来达到要求。
This article studies the change of threshold voltage and saturation voltage affected by external electric field with the change of various parameters such as anchor strength, elasticity coefficient.
研究外电场作用下向列液晶盒的阈值电压随锚定强度、弹性系数等各种参数的变化关系。
Deduced has been a relationship between the threshold voltage of MOSFET and the radiation dose rate.
计算了MOSFET阈电压与辐射剂量率之间的关系。
When VVMOSFET and NMOSFET are integrated into a monolithic integrated circuit, the values of threshold voltage tolerance between them are estimated theoretically and compared with process tests.
本文介绍了VVMOSFET和NMOSFET单片集成时阈值电压容差的理论估算和工艺试验结果，二者符合得较好。
Key challenges on CMOS scaling down into nanometer regime are discussed, such as power supply and threshold voltage, short-channel effect, quantum effect, random doping distribution and wire delay.
本论文着重论述未来CMOS进入纳米尺寸的关键挑战，如：电源电压和阈值电压减小、短沟效应、量子效应、杂质数起伏以及互连线延迟等影响。
It compensates for the temperature characteristics of the resistor and the threshold voltage VTH in such a way that the reference current has small temperature dependence.
主要利用电阻的温度系数与阈值电压VTH温度系数相同的特性实现温度补偿原理。
The body region was doped high to increase the back gate threshold voltage.
增加体区掺杂，以提高背栅阈值电压；
A threshold voltage model of DMOS by radiation induced positive spatial charge is proposed.
提出了一种DMOS辐照正空间电荷阈值电压模型。
A threshold voltage model of DMOS by radiation induced positive spatial charge is proposed.
提出了一种DMOS辐照正空间电荷阈值电压模型。
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