The photonic band gap materials have wide potential applications in fabricating new type of optical devices.
光子晶体可以用来制备全新原理、高性能的光学器件，具有广阔的应用前景。
In recent years, with the extensive application of short wavelength devices, the research of direct wide band gap semiconductor materials attracted more and more attention.
近年来，随着短波长光电器件的逐渐广泛应用，直接宽禁带半导体材料的研究越来越受到人们的重视。
The The results indicate that titanium oxide films have wide band gap and better blood-compatibility than LTIC.
研究表明，氧化钛薄膜具有宽禁带的半导体特性，血液相容性优于热解碳。
The investigation results show that the band gap of the photonic crystal made of LHM is wide and multi-transmittance peaks appear in the forbidden band.
研究结果表明：一维右手材料和左手材料构成的光子晶体具有宽禁带的特点，禁带中出现多个共振透射峰。
In recent years, much attention has been given to wide band gap semiconductors for the wide USES in blue and ultraviolet light emitters and detectors.
近几年来，宽禁带半导体材料引起人们的关注，因为这些材料在蓝光及紫外光发光二极管、半导体激光器和紫外光探测器上有重要的应用价值。
Other interesting properties of these materials include their wide band gap, stability under high temperature and chemical inertness.
除超硬性质以外，这些材料大都具有宽带隙、高温稳定性、化学惰性等优良的物理化学性质。
Although the energy loss of ordinary multi-layer photonic crystal structures is low, the band gap is usually limited, there is also wide-wide Angle high anti-band hard.
普通多层膜系结构光子晶体的禁带内能量损失较低，可是禁带宽度通常有限，而且出现较宽的全角高反带很难。
Main research fields are the preparation and ion implantation studies of advanced functional material films. The focuses are on the material and device characteristics of wide band gap semiconductors.
长期从事先进功能材料薄膜制备和离子注入改性方面的科学研究，重点是宽禁带半导体材料与器件。
The present invention relates to the MOCVD equipment and process of growing semiconductor ZnO film with wide band gap.
本发明涉及一种用于生长宽带隙半导体氧化锌薄膜的MOCVD设备及其工艺。
Electronic band structure calculations show that sc-C20 is a semiconductor with wide band gap of 4.20 eV, and the gap increase with pressure, similar to that of diamond.
电子能带结构计算表明sc - C20为宽带隙(4.20eV)半导体型碳，并且随着压力升高带隙呈现增大的趋势，sc - C20带隙的大小及变化规律与金刚石相似。
Electronic band structure calculations show that sc-C20 is a semiconductor with wide band gap of 4.20 eV, and the gap increase with pressure, similar to that of diamond.
电子能带结构计算表明sc - C20为宽带隙(4.20eV)半导体型碳，并且随着压力升高带隙呈现增大的趋势，sc - C20带隙的大小及变化规律与金刚石相似。
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