The front side diffusion layer is then removed.
而后去除正面的扩散层。
Step 6: Duplicate the Star Diffusion layer and group the two layers
第六步：复制星光柔化图层并另建包含这两图层的图层组
A gradient diffusion layer exists between the layer and the matrix.
基体与熔凝层之间存在梯度扩散层。
Step 8: Apply the opposite diagonal motion blur to the other Star Diffusion layer.
第八步：在另一个星光柔化图层上使用相反对角线的动态模糊效果。
The nitrided layer of pure iron consists of compound layer and diffusion layer.
纯铁渗氮层则由化合物层和扩散层组成。
Using the X-ray diffraction setup, phases in the diffusion layer were determined.
并用x -射线衍射对渗层相组成进行了分析。
Now select the other Star Diffusion layer that you did not apply the motion blur effect to.
现在选择另一个还没有进行动态模糊效果的星光柔化图层。
The microstructure and the properties of nickel diffusion layer were also investigated.
同时，对扩散层的组织和性能进行了研究。
The effect of ignition property on diffusion layer in normal ambient temperature was examined.
研究了几个常用的环境温度下扩散层对点火性能的影响。
Rapid cooling after nitrocarburizing, martensite structure is obtained at the diffusion layer.
氮碳共渗后快冷，在渗层获得含氮碳的马氏体组织。
The characteristics of so-called silicon diffusion layer were analyzed through EPMA and hardness test.
通过成分分析（EPMA）和硬度测试， 分析了硅扩散层的特征。
It is the compostiton of bulk material and deposition temperature that mainly affects the diffusion layer.
影响扩散层的主要因素是基体材料的成分和沉积温度；
Oxidation temperature has a more obvious effect on the thickening of oxygen diffusion layer than time dose.
温度对于渗氧层厚度的影响大于时间的影响。
Test shows that the depth of residual compressive after chemical heat treatment is correspondent with that of diffusion layer.
试验表明，化学热处理后残余压应力的深度往往与渗层深度相一致。
The relationships of chronoamperometric current and diffusion layer with electrolysis time are discussed at microband electrode.
本文讨论了微带电极的计时电流、扩散层与时间的关系；
The effects of the voids in the diffusion layer on cyclic oxidation and spalling resistance of aluminized steel was investigated.
研究了热浸渗铝钢扩散层空洞对循环氧化和剥落性能的影响规律及其机理。
The results show that the thickness of the diffusion layer increases obviously with the increase of temperature and holding time.
结果表明，扩散层的厚度随烧结温度的提高和保温时间的延长而增厚。
Nitriding and oxidation: diffusion layer and oxidation layer improve soldering resistance, adhesion resistance and crack resistance.
氮化扩散层和氧化层：可以提高模具耐溶损性、耐过烧性、耐粘着性和耐热裂性。
Properties of nitrided parts have close relation to phase composition of their compound layer and microstructure of their diffusion layer.
渗氮件的性能与渗氮层的化合物相组成和扩散层的微观结构密切相关。
The calculating results of activation energy show that the diffusibility of nanometer Ni is better than Ni foil in diffusion layer at joints.
通过计算接头处扩散层的激活能可知纳米镍的扩散性能比镍箔的好。
Phase transformation sequence in diffusion layer and the existence of residual austenite have great effect on the distribution of residual stress.
渗层中的相变次序和残余奥氏体的存在对残余应力分布影响较大。
However, cracks initialized in the diffusion layer between substrate and bond coat when TBCs were tested with low cycle fatigue at high temperature.
而在高温低周疲劳条件下裂纹是在粘结层与高温合金基体的扩散层处。
Part of their coating forms an alloy-like diffusion layer (about 1 mm) in the bulk of the metallic material, which is a great feature of this treatment.
部分合金涂层形式一样扩散层(约1毫米)在大部分的金属材料，这是一个伟大的特点，这种待遇。
Electrons are injected into the floating gate by applying a high voltage to the second impurity diffusion layer in capacitive coupling with the floating gate.
通过在与浮栅电容耦合的第二杂质扩散层上施加高电压对浮栅注入电子。
The interface structure of composite consists of core material diffusion layer, chilling solidified layer, directional growth layer, and cellular granular layer.
复合材料界面结构由芯材扩散层、激冷凝固层、方向性生长层和胞状晶粒层组成。
There is amorphous phase in diffusion layer of the hot-dip La-aluminizing and the content of the amorphous phase increases due to the addition of rare earths la.
热浸镀铝-镧钢的扩散层中存在非晶态相，且稀土镧的添加可使扩散层中的非晶含量增加。
The results show that rare earth elements can efficiently improve the structures of the Chromvanadizing layer, the rate of growth and properties of diffusion layer.
结果表明，稀土元素能有效地改善铬钒共渗层结构，提高共渗层生长速度和性能。
A new LT process was established after the preferred Selection of technology parameters, various examinations of properties of the diffusion layer and production practices.
通过诸工艺参数的优选，扩散层性能的多方面考核和生产实践，确定了LT新工艺。
A first impurity diffusion layer, which occupies a space within the semiconductor substrate, is provided separately apart from the floating gate by a predetermined distance.
在浮栅的两侧壁上，设置侧壁绝缘膜。第一杂质扩散层设置在半导体基板内，并与浮栅仅离规定的距离。
The relationship of the process parameters to the depth of diffusion, concentration of titanium in the diffusion layer and the microstructure of titanizing layer are studied.
探讨了工艺参数与渗层厚度的关系，渗钛层组织特征，渗层钛浓度分布。
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