The processes of energy transfer of semiconductor surface irradiated by picosecond laser pulses are studied. Discussion is focussed on energy transfer from the electron-hole plasma to the lattice.
在皮秒脉冲激光辐照时，半导体材料表面的能量转换过程中，重点讨论能量从电子-空穴等离子体到晶格的转换过程。
An implant is a plasma black hole with an approximate diameter similar to the diameter of an electron (10-17 meters).
负面植入物是电浆型态的黑洞。每个黑洞的直径约为一个电子的大小(10的负17次方公尺)。
An implant is a plasma black hole with an approximate diameter similar to the diameter of an electron (10-17 meters).
负面植入物是电浆型态的黑洞。每个黑洞的直径约为一个电子的大小(10的负17次方公尺)。
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