PNP epitaxial silicon transistor. Low frequency power amplifier.
PNP外延硅晶体管。低频功率放大器。
BST thin films sol gel technique epitaxial growth electrical properties.
标签薄膜溶胶-凝胶工艺外延生长电性能。
Epitaxial process and factors affecting property of the material were discussed.
讨论了外延工艺和影响材料性质的因素。
Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.
外延沉积接着用以形成一外延层于该外延表面上。
Epitaxial growth steps and growth spirals were observed from epitaxial film appearance photograph.
从外延形貌照片中观察到了外延生长台及生长螺线。
A two-step epitaxial growth technique from low pressure to atmospheric pressure has been presented.
本文提出了低-常压两步外延生长技术。
Experiments show that the epitaxial growth structure could be used in the preparation of APD devices.
测试结果表明，利用所采用的外延生长结构制备APD器件，具有可行性。
The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type.
第二外延层被布置在收集器层上并且被掺杂为具有第一导电类型。
The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well.
第一外延层被布置在衬底之上并且被掺杂为也具有第一导电类型。
It was also found that we could enhance the LED output power by using lateral epitaxial patterned sapphire (LEPS).
也发现借由条状蓝宝石基板横向磊晶法(LEPS)，可以提升发光二极体的输出功率。
The formation of hard bubbles by single-pulse bias field in epitaxial garnet films was investigated in some detail.
实验研究了一次脉冲偏场作用下外延石榴石膜硬磁泡的形成规律。
A few methods are introduced at home and abroad on producing PIN diodes: diffusion, ion implantation, and epitaxial.
国内外制备PIN二极管主要采用离子注入方法，扩散方法，外延方法。
Modern advanced epitaxial growth technology has made the widely application of SiGe strained layer materials possible.
现代先进的外延技术使应变层锗硅材料的应用成为可能。
The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer.
光收集区域收集光生电荷载流子并被布置在第二外延层内。
The measurements of XRD, SEM and XPS show that the as - grown BNN film is epitaxial single crystal with smooth surface.
X射线衍射，扫描电子显微镜，X射线光电子能借测量表明生长的BNN膜是外延单晶膜。
An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed.
本发明提供一外延沉积工艺，其包含干式蚀刻工艺与后续的外延沉积工艺。
The experimental results prove that the fall time of IGBT increases when increasing the thickness of the epitaxial layer.
实验结果证明IGBT的下降时间随着外延层厚度的增加而增加。
Photoluminescence properties of epitaxial silicon implanted carbon after annealed in hydrogen and anodization are measured.
研究了注碳外延硅经氢气退火及电化学腐蚀处理后的荧光特性。
From the time-dependence of reflectivity at different temperature the solid phase epitaxial (SPE) growth rate was calculated.
从反射率随时间的变化曲线，计算出不同退火温度下的固相外延速率。
The characteristics and processing methods of ELO (Epitaxial Lateral Overgrowth), one of SOI technologies, have been described.
本文论述了SOI方法之一——ELO（外延横向覆盖生长）技术的特点和工艺方案。
Further growth of continuous compound semiconductor thick films (15) or wafer is achieved by epitaxial lateral overgrowth using HVPE.
通过使用HVPE的外延横向过生长实现连续的化合物半导体厚膜(15)或晶片的进一步的生长。
Recent results with CBE show that CBE holds the potential as an important new epitaxial technique that goes beyond both MBE and MOCVD.
最近用化学束外延得到的结果表明CBE具有超过MBE和MOCVD的潜力而成为一种非常重要的新的外延技术。
In this paper, experiment of homogeneous epitaxial, growing of single crystal diamond film by flame method in atmosphere was conducted.
采用大气下火焰法进行了金刚石单晶膜的同质外延实验。
Based on actual measurement results, the influence of process quality of semiconductor substrate wafers on epitaxial growth is described.
本文根据实际测量结果，一叙述了半导体衬底制片质量对外延生长的影响。
The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type.
收集器层被选择性地布置在第一外延层的至少一部分上并且被掺杂为具有第二导电类型。
The density and contact effect of the film were improved by the introduction of a transitory high temperature treatment ahead of epitaxial growth.
提出一种在生长温区前进行短暂熔融处理的工艺手段，提高了薄膜的致密性和浸润效果。
The surface smoothness of the single crystal substrate will be the most important factor, which influences the quality of the epitaxial film growth.
单晶基片的表面光洁度指标是影响后续薄膜生长质量的重要因素。
Therefore the dopant concentration profile measured by this method is a better approximation for practical carrier profile in silicon epitaxial layers.
因此，用此法测量的外延层分布是实际载流子分布的一种较好的近似。
The invention is concerned with the manufacture method of the silicon epitaxial slice that is the silicon extension method of remixing arsenic substrate.
本发明公开了一种制造硅外延片的方法，即一种重掺砷衬底的硅外延方法。
The invention is concerned with the manufacture method of the silicon epitaxial slice that is the silicon extension method of remixing arsenic substrate.
本发明公开了一种制造硅外延片的方法，即一种重掺砷衬底的硅外延方法。
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