• The bigger the atomic number, the deeper the impurity level is.

    原子序数越大,杂质能级越深。

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  • It is believed that the emission peaks were concerned with impurity level in the bandgap.

    变温实验说明相应发射峰与材料禁带中形成的杂质能级有关。

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  • Varying impurity level, it was found that this microstructural effect is independent of temper embrittlement.

    改变杂质水平,看出显微组织的影响与回火脆性无关。

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  • This is a photonic impurity state, similar to the impurity level in semiconductor. The introduction of impurity layer increased the width…

    杂质层的引入增宽了原来光子禁带的宽度,杂质态的特征与杂质层的光学厚度、 折射率及在晶体中的位置等因素有关。

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  • These data can be used to estimate the lifetime of plasma facing components and analyze the impurity level in core plasma of fusion reactors.

    这些数据对估计对等离子体部件的寿命和堆芯等离子体中的杂质水平是有意义的。

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  • These data might be useful to estimate the lifetime of plasma facing components and to analyze the impurity level in core plasma of fusion reactors.

    这些结果对估计面对等离子体的部件寿命和分析聚变堆堆芯等离子体中的杂质水平估计是很有用的。

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  • If analytical equipment is available, purge system until oxygen content of residual gas is either less than or meets the process specification impurity level.

    如果有分析仪器的话,一直净化设备,直到残留气体的氧含量或者低于或者满足工艺规范的纯度级别。

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  • An identification technique was presented for estimating the impurity level in propellant and the properties of exhaust afterburning, which can not be measured simply by experiment.

    提出用参数辨识确定推进剂中钾、钠杂质含量以及后燃对喷焰微波衰减影响程度的方法。

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  • It has been found that a bound state of excitation exists around a paramagnetic impurity with its energy level in the energy gap.

    证明在磁性杂质附近,可能形成一个束缚态的元激发,其能量位于能隙之中。

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  • But too high thickness and doping level will do harm to the smoothness of film surface with doped impurity deteriorating the crystallization.

    但是薄膜厚度的增大和掺杂浓度的提高会恶化膜面的平整度,同时过量的掺杂也会影响薄膜的结晶性能。

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  • It was found that the deepness of impurity energy level is related to the atomic Numbers of doped elements by the analysis of their electronic structures.

    通过对电子结构的分析,发现杂质能级的深浅与掺杂元素原子序数有关。

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  • It was found that the deepness of impurity energy level is related to the atomic Numbers of doped elements by the analysis of their electronic structures.

    通过对电子结构的分析,发现杂质能级的深浅与掺杂元素原子序数有关。

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