The bigger the atomic number, the deeper the impurity level is.
原子序数越大，杂质能级越深。
It is believed that the emission peaks were concerned with impurity level in the bandgap.
变温实验说明相应发射峰与材料禁带中形成的杂质能级有关。
This is a photonic impurity state, similar to the impurity level in semiconductor. The introduction of impurity layer increased the width…
杂质层的引入增宽了原来光子禁带的宽度，杂质态的特征与杂质层的光学厚度、 折射率及在晶体中的位置等因素有关。
This is a photonic impurity state, similar to the impurity level in semiconductor. The introduction of impurity layer increased the width…
杂质层的引入增宽了原来光子禁带的宽度，杂质态的特征与杂质层的光学厚度、 折射率及在晶体中的位置等因素有关。
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