A design approach for low power CMOS low noise amplifier (LNA) is presented and it is compared with the traditional LNA design method.
针对低功耗电路设计的需求，提出了一种低功耗约束下CMOS低噪声放大器的设计方法，并与传统的设计方法进行了对比。
On the basis of the noise linearity of low noise amplifier(LNA), the variable load temperature method is introduced to measure noise properties of cryogenic LNAs.
在低噪声放大器噪声线性的基础上，介绍了负载温度可变法，用于测量低温低噪声放大器的噪声。
The low noise amplifier (LNA) can reduce the system noise and improve the receiver's sensitivity, it is the key-part in the receive system.
低噪声放大器在接收系统中能降低系统的噪声和提高接收机灵敏度，是接收系统的关键部件。
An S-band broadband low noise amplifier (LNA) design is introduced.
设计了一个S频段宽带低噪声放大器。
Power amplifier (PA) and low noise amplifier (LNA) modules are important components of RF hybrid IC's.
功率放大器（PA）和低噪声放大器（LNA）模块是射频（RF）混合集成电路的重要组成部分。
A wideband low noise amplifier (LNA) topology for ultra-wideband (UWB) system is proposed by combining PCSNIM de-sign flow with a resistive shunt-feedback.
结合电阻并联反馈，利用PCSNIM流程设计了一个用于超宽带（UWB）系统的宽带LNA电路。
A low noise amplifier (LNA) and a mixer realized in standard digital CMOS technology are presented in this thesis.
本文设计了基于标准的数字CMOS工艺的低噪声放大器和混频器。
The RF5521 FEM combines a low noise amplifier (LNA) with bypass and a single pole three throw (SP3T) switch.
有限元法的RF 5521结合低噪声旁路放大器(LNA)和一个单极三掷(SP3T)开关。
The noise figure of a microwave or millimeter-wave system basically lies on the noise of the front amplifier, so the Low Noise Amplifier (LNA) plays critical role for the receiving system.
微波、毫米波系统的噪声系数基本上取决于前级放大器的噪声系数，所以低噪声放大器是接收系统中相当重要的部件。
A systematic approach is used to analyze the noise in CMOS low noise amplifier (LNA), including channel noise and induced gate noise in MOS devices.
采用系统研究方法来分析包括MOS器件的沟道噪声和感应栅噪声在内的CMOS低噪声放大器中的噪声，并提出了一个新的噪声系数解析式。
A systematic approach is used to analyze the noise in CMOS low noise amplifier (LNA), including channel noise and induced gate noise in MOS devices.
采用系统研究方法来分析包括MOS器件的沟道噪声和感应栅噪声在内的CMOS低噪声放大器中的噪声，并提出了一个新的噪声系数解析式。
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