Germanium window with low absorption will be obtained through controlling donor concentration and doping isoelectronic im purity.
控制施主浓度和掺杂等电子杂质，可以获得低吸收锗窗。
It is indicated that the intrinsic carrier concentration increases more rapidly with increasing the doping concentration at low...
与常温情况相比，低温下本征载流子浓度将随杂质浓度的上升更为剧烈地上升。
It is indicated that the intrinsic carrier concentration increases more rapidly with increasing the doping concentration at low...
与常温情况相比，低温下本征载流子浓度将随杂质浓度的上升更为剧烈地上升。
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