An ultra low insertion loss GaAs MMIC RF SPDT switch based on full-ion-implantation technology is reported.
报道了利用离子注入技术研制出一种用于手机的超低插损砷化镓单片射频单刀双掷开关。
It is characterized by good frequency selectivity, low insertion loss and high attenuation of specified frequency.
它具有频率选择性好，通带插损低，对陷波频点抑制较高的优点。
The elliptic-function filter using hairpin stepped impedance has such advantages as compact structure, low insertion loss, broad-stopband and high steep.
应用发夹线高低阻抗线设计的椭圆函数滤波器具有体积小、插损低、宽阻带、高陡峭度的显著优点。
The switch is characterized by simple structure, polarization-independence, low optic insertion loss and interchannel crosstalk, fast response speed, small in size and low drive voltage, etc.
这种磁光开关具有结构紧凑、器件体积小、偏振无关性、响应速度快、驱动电压低和串扰小等优点；
Feature: Good self-heating, high capacitance rate, low loss, high resistance current strike rate, high reliability. Available for automatic insertion.
具有良好的自愈性，比率容量大，损耗低，耐电流冲性能好，可靠性高。
Feature: Good self-heating, high capacitance rate, low loss, high resistance current strike rate, high reliability. Available for automatic insertion.
具有良好的自愈性，比率容量大，损耗低，耐电流冲性能好，可靠性高。
应用推荐