The differences in the structures and properties of multiple quantum well between different areas on a wafer were achieved using selective partial disordering.
利用选择性部分无序技术获得了单片外延片上不同区域的多量子阱在结构与性质上的差异。
The differences in the structures and properties of multiple quantum well between different areas on a wafer were achieved using selective partial disordering.
利用选择性部分无序技术获得了单片外延片上不同区域的多量子阱在结构与性质上的差异。
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