DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocity saturation effect is considered.
本文首先建立了一个SOIMOSFET器件的直流漏电流模型和阈值电压模型,模型考虑了速度饱和效应。
Features: High voltage low saturation, low collector output capacitance, complementary pair with MPSA92 (3cg92).
特点:耐压高,饱和压降低,集电极输出电容低,与MPSA92 (3cg92)互补。
Features: High voltage, low saturation voltage, low collector capacitance output, complementary pair with MMBTA92 (3cg92m).
特点:耐压高,饱和压降低,集电极输出电容低,与MMBTA92 (3cg92m)互补。
Features: High voltage, low saturation voltage, low collector capacitance output, complementary pair with MMBTA92 (3cg92m).
特点:耐压高,饱和压降低,集电极输出电容低,与MMBTA92 (3cg92m)互补。
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