This instrument has been used to measure the sheet resistance distribution for Boron diffusion chip.
并用该仪器测定了硼扩散片的薄层电阻分布。
This instrument has been used for measuring the sheet resistance distribution for Boron diffusion chip.
并用该仪器测定了硼扩散片的薄层电阻分布。
A new method for measuring sheet resistance of semiconductor using four-point probe has been developed.
本文介绍用四探针技术测量半导体薄层电阻的新方案。
The sheet resistance of films decreased with an increase of PANI content, while visible light transmittance of the hybrid films also declined.
随着PANI含量的增加，薄膜的可见光透过率逐渐下降，方块电阻也降低。
The initial experiments on and analysis of sheet resistance, contact, photomask alignment, line width, and correlations between device parameters and dopants have been made.
对薄层电阻、接触、光掩模对准、线条宽度、器件参数与掺杂的相关性等内容进行了初步试验和分析。
Then, the effects of heat treatment and temperature on the chemical composition and sheet resistance of the prepared films were investigated by XRD, EDXS and sheet resistance measurements.
利用X射线衍射和能量散射X射线能谱表征方法，并结合薄膜方块电阻的测定，探讨了热处理方式和热处理温度对薄膜化学组成及薄膜电阻的影响。
In this article, we drive the equations of measuring resistivity and surface sheet resistance, taking into account the contact dimension and putting the location of the four probes arbitrary.
本文考虑到接触面积大小的影响，并让四根探针排列成任意形状，导出了测量电阻率和薄层电阻的关系式。
In this article, we drive the equations of measuring resistivity and surface sheet resistance, taking into account the contact dimension and putting the location of the four probes arbitrary.
本文考虑到接触面积大小的影响，并让四根探针排列成任意形状，导出了测量电阻率和薄层电阻的关系式。
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