• Experiments are performed to confirm the chemical etching method for defining the crystallographic orientation of silicon single crystals.

    通过实验肯定了硅单晶的化学侵蚀定向方法,找出抛光液的最佳配比及抛光时间。

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  • The chemical etching method wa applied to form surface texture of multicrystalline silicon in order to reduce the reflectance of the surface.

    为了降低光在多晶硅表面的反射,采用化学腐蚀法在其表面制备了绒面。

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  • The crystal defects were studied by optical method and chemical etching method.

    用光学法和化学腐蚀法研究了晶体的缺陷,并分析了缺陷成因。

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  • The twins in NYAB and NGAB crystals were investigated by synchrotron radiation topography and chemical etching method.

    采用同步辐射形貌术结合化学腐蚀法,系统研究了NYAB和NGAB晶体中的孪晶结构。

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  • In the study, in order to get good precision of dimension and position of fine leads, chemical etching method is used to make high density double assess single-sided FPC.

    研究采用化学蚀刻聚酰亚胺的方法来制作双面连接的单面挠性板,以满足精细手指的尺寸和位置精度的要求。

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  • This paper investigated the law of KPB crystal twinning using microcrystallography, chemical etching and optical method.

    本文采用显微结晶、化学浸蚀和光学方法研究了KPB晶体的孪生规律。

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  • The distribution of residual stress along depth gained through layer-by-layer measuring method after chemical etching is in line with that measured by multi-wavelength method.

    化学蚀刻后逐层测试所得应力沿深度分布与用多波长法测试结果趋势一致,大小略有差异。

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  • This paper introduces a fabricated method of using fused silica as the chip material. It includes standard photolithography, wet chemical etching and bonding techniques.

    本文介绍了选用优质石英为芯片基体材料的一种制作方法,关键技术包括标准的光刻,湿法腐蚀,键合等微加工技术。

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  • This paper introduces a fabricated method of using fused silica as the chip material. It includes standard photolithography, wet chemical etching and bonding techniques.

    本文介绍了选用优质石英为芯片基体材料的一种制作方法,关键技术包括标准的光刻,湿法腐蚀,键合等微加工技术。

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