The exact determination of the breakdown voltage must therefore be attached to the measurement of an electrical value characteristic of the dielectric breakdown phenomenon.
因此击穿电压的检测必须重视电介质击穿现象的电参数值的测量。
They are thermal expansion, vaporization and dielectric breakdown.
它们是热膨胀、汽化和介质击穿。
A physical model of dielectric breakdown was presented in IC silicon dioxide films.
提出了芯片门电路硅氧化层静电放电介质击穿的物理模型。
The time dependent dielectric breakdown of tunneling oxide used for EEPROM's is investigated.
阐述了应用于EEPROM中的超薄隧道氧化层随时间的击穿特性。
TDDB(time-dependent dielectric breakdown)is a key method to value the quality of thin gate oxide.
经时绝缘击穿（TDDB）是评价薄栅氧化层质量的重要方法。
And proper content of nano-Al2O3 could improve dielectric breakdown strength of these composites.
适量纳米Al2O3可以提高材料的电击穿强度。
A state monitoring method of power cable based on the analysis of dielectric breakdown characteristic was presented.
在对绝缘介质击穿特性分析的基础上提出了一种电力电缆状态监测方法。
The short-pulsed liquid dielectric breakdown characteristic is the basis of the application of pulse-power technique.
快脉冲下液体绝缘介质击穿特性是脉冲功率技术应用的基础。
The time to dielectric breakdown under magnetic field depended on the relative Angle between magnetic field and sample surface.
磁场环境下的绝缘破坏时间依赖于磁力线与试样表面的相对夹角。
The process of dielectric breakdown in uneven electric field is analyzed and the influence of electrode polarity on gap breakdown is researched.
文中分析了在极不均匀电场下间隙的击穿过程，并用试验研究了微细加工时电极极性对间隙击穿电压的影响。
Test method for ASTM D149 solid electrical insulating materials at commercial power frequencies the dielectric breakdown voltage and dielectric strength.
ASTM D149固体电绝缘材料在工业电源频率下的介电击穿电压和介电强度的试验方法。
Standard Test Method for dielectric breakdown voltage and dielectric strength of D149 ASTM solid electrical insulating materials at industrial power frequencies.
ASTM D149固体电绝缘材料在工业电源频率下的介电击穿电压和介电强度的试验方法。
Dielectric breakdown of BST thin films prepared by RF sputtering is studied in this paper.
采用射频溅射制备BST薄膜，研究了薄膜的介电击穿特性。
Dielectric breakdown of BST thin films prepared by RF sputtering is studied in this paper.
采用射频溅射制备BST薄膜，研究了薄膜的介电击穿特性。
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