The threshold voltage of the transistor thus formed is controlled by the amount of charge that is retained on the floating gate.
如此形成的晶体管的阈值电压由保持在浮动栅极上的电荷量控制。
The analytical solutions to 1D Schrdinger equation (in depth direction) in double gate (DG) MOSFETs are derived to calculate electron density and threshold voltage.
推导了双栅MOSFET器件在深度方向上薛定谔方程的解析解以求得电子密度和阈电压。
The relative sizes of the first and second gate conductors in a given transistor control the threshold voltage for the transistor.
在给定晶体管中的第一栅极导体和第二栅极导体的相对尺寸控制晶体管的阈值电压。
In addition, the threshold voltage is capable of being finely tuned with a proper gate bias .
除此之外，由于强烈的闸极耦合效应，在分离的上闸极加上适当的偏压，便可精确地调控临限电压。
When the threshold voltage is negative and a read is attempted by applying 0 V to the control gate, the memory element will turn on to indicate logic one is being stored.
当阈值电压为负且通过向控制栅极施加0V来尝试读取时，存储器元件将接通以指示正在存储逻辑1。
When the threshold voltage is negative and a read is attempted by applying 0 V to the control gate, the memory element will turn on to indicate logic one is being stored.
当阈值电压为负且通过向控制栅极施加0V来尝试读取时，存储器元件将接通以指示正在存储逻辑1。
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