During fabrication of the NEMS probes, KOH anisotropic etching technology has been developed for the formation of suitable silicon island with top size within 0.5 to 0.8m.
在器件制造的过程中，采用KOH各向异性腐蚀硅尖技术制造出了顶部尺寸在0.5～0.8微米范围内符合要求的硅岛；
Two mutually vertical fibers coupling grooves are fabricated by using anisotropic etching of the(110) silicon in the KOH solution.
利用（110）硅片在KOH溶液中各向异性腐蚀制作出两个互相垂直的光纤定位槽。
This paper has Studied anisotropic etching mechanism of St in KOH scution by using collision theory.
本文应用碰撞理论研究了硅在KOH溶液中各向异性腐蚀的机理。
Etching silicon tips in anisotropic KOH solution has the advantages of simple, easy to handle, low cost and homogeneous etching rate of (100) crystal plane on a whole wafer.
各向异性KOH溶液腐蚀硅尖具有简单、易于实现、成本低廉、(100)晶面腐蚀速率均匀等优点。
Etching silicon tips in anisotropic KOH solution has the advantages of simple, easy to handle, low cost and homogeneous etching rate of (100) crystal plane on a whole wafer.
各向异性KOH溶液腐蚀硅尖具有简单、易于实现、成本低廉、(100)晶面腐蚀速率均匀等优点。
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