Using a new kind of liquid-phase epitaxy technology, V-channeled substrate inner stripe visible GaAlAs semiconductor laser with a large optical cavity is fabricated.
采用一种新的液相外延工艺，研制出了具有大光胶结构的V型槽衬底内条形可见光发射半导体激光器。
It is suggested that logarithm transform of oscillograph and large dynamic range of detector should be applied to adjust the optical cavity for improving metrical precision.
在光路调节中采用具有对数变换功能的示波器和动态范围较大的探测器，可以提高测量精度。
It is suggested that logarithm transform of oscillograph and large dynamic range of detector should be applied to adjust the optical cavity for improving metrical precision.
在光路调节中采用具有对数变换功能的示波器和动态范围较大的探测器，可以提高测量精度。
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